description: the central semiconductor CMLT5551 consists of two individual, isolated npn silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an sot-563 surface mount package. this picomini? devices has been designed for small signal general purpose and switching applications. marking code: 5c5 maximum ratings: (t a =25 o c) symbol units collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 o c thermal resistance ja 357 o c/w electrical characteristics per transistor: (t a =25 o c unless otherwise noted) symbol test conditions min max units i cbo v cb =120v 50 na i cbo v cb =120v, t a =100c 50 a bv cbo i c =100a 180 v bv ceo i c =1.0ma 160 v bv ebo i e =10a 6.0 v v ce(sat) i c =10ma, i b =1.0ma 0.15 v v ce(sat) i c =50ma, i b =5.0ma 0.20 v v be(sat) i c =10ma, i b =1.0ma 1.00 v v be(sat) i c =50ma, i b =5.0ma 1.00 v h fe v ce =5.0v, i c =1.0ma 80 h fe v ce =5.0v, i c =10ma 80 250 h fe v ce =5.0v, i c =50ma 30 f t v ce =10v, i c =10ma, f=100mhz 100 300 mhz c ob v cb =10v, i e =0, f=1.0mhz 6.0 pf h fe v ce =10v, i c =1.0ma, f=1.0khz 50 200 nf v ce =5.0v, i c =200a, r s =10 ? 8.0 db f=10hz to 15.7khz CMLT5551 surface mount picomini tm dual npn small signal silicon switching transistors sot-563 case central semiconductor corp. tm r0 (15-october 2004)
central semiconductor corp. tm sot-563 case - mechanical outline CMLT5551 surface mount picomini tm dual npn small signal silicon switching transistors a b c h g f d e e r0 12 3 65 4 r0 (15-october 2004) lead code: 1) emitter q1 2) base q1 3) collector q2 4) emitter q2 5) base q2 6) collector q1 marking code: 5c5
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